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| PH2920 N-channel enhancement mode field-effect transistor M3D748 Rev. 01 -- 13 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH2920 in SOT669 (LFPAK). 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Portable appliances s Switched mode power supplies s Notebook computers. 1.4 Quick reference data s VDS 20 V s Ptot 62.5 W s ID 60 A s RDSon 2.9 m 2. Pinning information Table 1: Pin 1,2,3 4 mb Pinning - SOT669 (LFPAK), simplified outline and symbol Description source (s) mb Simplified outline Symbol d gate (g) drain (d) g 1 2 3 4 MBL286 Top view MBL288 s1 s2 s3 SOT669 (LFPAK) Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions Tj = 25 to 150 C Min -55 -55 Max 20 20 60 240 62.5 +150 +150 60 240 Unit V V A A W C C A A Source-drain diode 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 2 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 120 03ah31 120 Ider (%) 80 03am08 Pder (%) 80 40 40 0 0 50 100 150 200 Tmb (C) 0 0 60 120 Tmb (C) 180 P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------- x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 ID (A) 03am09 RDSon = VDS / ID 102 tp = 100 s 1 ms DC 10 100 ms 10 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 3 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 4. Thermal characteristics Table 3: Rth(j-mb) Thermal characteristics Conditions Min Typ Max Unit 2 K/W thermal resistance from junction to mounting base Symbol Parameter 4.1 Transient thermal impedance 10 Zth(j-mb) (K/W) 1 0.2 0.1 0.05 10-1 0.02 03am10 = 0.5 single pulse 10-2 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 4 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 5. Characteristics Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IGSS RDSon gate-source threshold voltage drain-source leakage current gate-source leakage current drain-source on-state resistance ID = 10 mA; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 VDS = 20 V; VGS = 0 V; Tj = 25 C VGS = 16 V; VDS = 0 V VGS = 10 V; ID = 30 A; Figure 7 and 8 VGS = 4.5 V; ID = 30 A Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr forward transconductance total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 60 A; VGS = 0 V; Figure 12 reverse recovery time IS = 60 A; dIS/dt = -50 A/s; VGS = 0 V VDD = 10 V; ID = 30 A; VGS = 10 V; RG = 4.7 VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 VDS = 10 V; ID = 30 A ID = 60 A; VDD = 10 V; VGS = 10 V; Figure 13 45 75 60 15 11 S nC nC nC pF pF pF ns ns ns ns V ns 20 1 1.75 0.06 2.6 4.3 2.5 1 10 2.9 5.8 V V A A m m Conditions Min Typ Max Unit 4200 1200 650 20 85 95 20 0.85 50 1.1 - Source-drain (reverse) diode 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 5 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 130 ID (A) 104 03am11 10 V 4V 100 ID (A) 75 03am12 3.5 V 78 50 52 3V 26 150 C 0 0 2 4 VDS (V) 6 0 0 1 2 3 VGS (V) 4 Tj = 25 C 25 Tj = 25 C Tj = 25 C and 150 C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 65 RDSon (m) 52 3V 03am13 2 a 1.5 03am14 39 1 26 3.5 V 0.5 13 4V 10 V 0 0 14 28 42 56 ID (A) 70 0 -100 0 100 Tj (C) 200 Tj = 25 C R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 6 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 3.5 VGS(th) (V) 2.8 03am15 10-1 ID (A) 03am16 max 10-2 2.1 typ 1.4 min 10-4 0.7 10-3 min typ max 0 -100 10-5 0 100 Tj (C) 200 0 1 2 VGS (V) 3 ID = 1 mA; VDS = VGS Tj = 25 C Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 104 03am17 60 IS (A) 40 03am18 C (pF) Ciss 103 Coss 150 C Crss 20 Tj = 25 C 102 10-1 0 1 10 2 VDS (V) 10 0 0.3 0.6 0.9 VSD (V) 1.2 VGS = 0 V; f = 1 MHz Tj = 25 C and 150 C; VGS = 0 V Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 7 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 10 VGS (V) 8 03am19 6 4 2 0 0 20 40 60 Q (nC) 80 G Tj = 25 C; ID = 60 A; VDD = 10 V Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 8 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 6. Package outline Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads SOT669 E b2 L1 A c2 A2 C E1 mounting base D1 H D L2 1 e 2 3 b 1/2 e 4 X wMA c A A1 C (A 3) L detail X 0 2.5 scale 5 mm yC DIMENSIONS (mm are the original dimensions) UNIT mm A 1.20 1.01 A1 0.15 0.00 A2 1.10 0.95 A3 0.25 b 0.50 0.35 b2 4.41 3.62 c 0.25 0.19 c2 0.30 0.24 D(1) 4.10 3.80 D1(1) max 4.20 E(1) 5.0 4.8 E1(1) 3.3 3.1 e 1.27 H 6.2 5.8 L 0.85 0.40 L1 1.3 0.8 L2 1.3 0.8 w 0.25 y 0.1 8 0 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC MO-235 JEITA EUROPEAN PROJECTION ISSUE DATE 02-07-10 03-02-05 Fig 14. SOT669 (LFPAK). 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 9 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 7. Revision history Table 5: Rev Date 01 20030613 Revision history CPCN Description Product data (9397 750 11119) 9397 750 11119 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 10 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor 8. Data sheet status Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 9. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 11. Trademarks TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 10. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 11119 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved. Product data Rev. 01 -- 13 June 2003 11 of 12 Philips Semiconductors PH2920 N-channel enhancement mode field-effect transistor Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 June 2003 Document order number: 9397 750 11119 |
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